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学会発表 (2012)

  1. H. Ohno,
    "Electric-field manipulation and switching of magnets",
    Workshop on Spin Phenomena in Reduced Dimensions, 2012/9/21.（招待）
  2. H. Naganum, G. Kim, M. Oogane, and Y. Ando,
    "Perpendicularly magnetized magnetic tunnel junctions using L1o-FePd/CoFeB free layer",
    IUMRS-International Conference on Electronic Materials, 2012/9/24.
  3. M. N. I. Khan, H. Naganuma, N. Inami, M. Oogane and Y. Ando,
    "Post-deposition annealing effect on PMA for FePd/CoFeB/MgO trilayer",
    The 21st International Colloquium on Magnetic Films and Surfaces (ICMFS), 2012/9/24.
  4. K. Mizunuma, M. Yamanouchi, H. Sato, S. Ikeda, S. Kanai, F. Matsukura, and H. Ohno,
    "Ferromagnetic resonance by means of homodyne detection technique in CoFeB/MgO magnetic tunnel junctions with perpendicular easy axis",
    The 21st International Colloquium on Magnetic Films and Surfaces (ICMFS), 2012/9/24.
  5. S. Fukami, M. Yamanouchi, S. Ikeda, and H. Ohno,
    "Domain wall depinning probability - Experiment and Theory -",
    The 21st International Colloquium on Magnetic Films and Surfaces (ICMFS), 2012/9/25.
  6. H. Ohno,
    "Physics and Materials of Perpendicular CoFeB/MgO Magnetic Tunnel Junction",
    The 21st International Colloquium on Magnetic Films and Surfaces (ICMFS), 2012/9/25.（招待）
  7. D. Suzuki, Y. Lin, M. Natsui, and T. Hanyu,
    "Design of Compact Nonvolatile Lookup-Table Circuit Using Three-Terminal Magnetic-Tunnel-Junction-Based Single-Ended Structure",
    Solid State Devices and Materials（SSDM） 2012, 2012/9/26.
  8. S. Kanai, M. Yamanouchi, S. Ikeda, F. Matsukura, and H. Ohno,
    "Electric-field induced magnetization switching in CoFeB-MgO with perpendicular anisotropy",
    The 21st International Colloquium on Magnetic Films and Surfaces (ICMFS), 2012/9/27.
  9. T. Endoh,
    "MTJ Based Non-volatile RAM and Logic for Future System with Standby Power Zero",
    9th Sematech International Symposium on Advanced Gate Stack Technology, 2012/10/4.（招待）
  10. S. Ikeda, R. Koizumi, S. Ishikawa, H. Sato, M. Yamanouchi, K. Mizunuma, S. Kanai, F. Matsukura, H. Ohno,
    "Magnetic anisotropy in CoFe（B）/MgO stack structures",
    The 2nd International conference of Asia Union of Magnetics Societies (ICAUMS 2012), 2012/10/4.
  11. H. Ohno,
    "Bridging Semiconductors and Magnetism -Toward Stand-by Power Free VLSIs",
    7th International Conference on Hot-Wire Chemical Vapor Deposition, 2012/10/11.（招待）
  12. H. Ohno,
    "Spintronics-based Nanovolatile CMOS VLSI",
    Advanced Metallization Conference 2012 (ADMETA), 2012/10/23.（招待）
  13. H. Ohno,
    "Electrical Manipulation of Magnetism",
    5th Series of WPI-AIMR Joint Seminar, 2012/10/26.（招待）
  14. F. Matsukura,
    "Recent progress in spintronics materials (distinguished guest lecturer)",
    The 8th International Workshop on LEEM/PEEM, 2012/11/15.（招待）
  15. T. Endoh,
    "High Speed STT-MRAM for Cash Memory and Low Power Nonvolatile Logic with MTJ technology",
    New Non-Volatile Memory Workshop 2012, 2012/11/16.（招待）
  16. T. Endoh （Panelist）,
    "Panel Discussion："Can emerging memories find their own niche and survive?",
    New Non-Volatile Memory Workshop 2012, 2012/11/16.（招待）
  17. F. Matsukura, S. Kanai, M. Yamanouchi, S. Ikeda, Y. Nakatani, and H. Ohno,
    "Magnetization reversal of CoFeB induced by the application of electric fields",
    WPI-AIMR Workshop Topological Functional Materials and Devices, 2012/12/1.
  18. 遠藤哲郎
    "待機電力ゼロシステムを切り開くSTT-MRAMの現状と将来 （STT-MRAM Technology for realizing a Zero standby-power system and its future potential）",
    セミコン・ジャパン2012 2012/12/5.（招待）
  19. 畠山憲三、 永沼博、 井波暢人、 河田祐紀、 金国天、 大兼幹彦、安藤康夫
    "L10-FePdを用いたスピントルクダイオード効果の観測",
    第67回応用物理学会東北支部学術講演会 2012/12/7.
  20. 森廣智之、大兼幹彦、永沼博、安藤康夫
    "プラズマ酸化によるMgO障壁層を用いたCo2MnSi電極強磁性トンネル接合の作製",
    第67回応用物理学会東北支部学術講演会 2012/12/7.
  21. 猿山陽鏡、大兼幹彦、 永沼博、 安藤康夫
    "垂直磁化MnAl薄膜における磁気特性の作製条件依存性",
    第67回応用物理学会東北支部学術講演会 2012/12/7.
  22. T. Endoh, T. Ohsawa, H. Koike,T. Hanyu, H. Sato, S. Ikeda, H. Ohno,
    "Tutorial: Spintronics for Embedded Non-volatile Electronics",
    International Electron Devices Meeting （IEDM）, 2012/12/8.（招待）
  23. S. Ishikawa, H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura and H. Ohno,
    "Magnetic tunnel junctions of MgO-[Co/Pt] multilayers with a insertion of CoFeB layer",
    スピントロニクス入門セミナー 2012/12/11.
  24. 大野英男
    "スピントロニクス素子の将来展望",
    東北大学電気通信研究所共同プロジェクト研究会 2012/12/14.
  25. 金井駿、山ノ内路彦、池田正二、仲谷栄伸、松倉文礼、大野英男
    "垂直磁化CoFeB-MgO接合における電界誘起磁化反転",
    第17回半導体スピン工学の基礎と応用 2012/12/20.
  26. 安藤康夫
    "XMCDを用いた強磁性トンネル接合界面の解析と伝導特性",
    第二回　東北大学　光・量子ビーム科学連携ワークショップ 2013/1/8.（招待）
  27. 遠藤哲郎、池田正二、羽生貴弘、笠井直記、大野英男
    "MRAMの最新動向",
    電子ジャーナル 2013/1/11.（招待）
  28. 林玉輝、鈴木大輔、羽生貴弘
    "3端子MTJ素子を用いたコンパクト不揮発LUT回路の構成",
    多値論理とその応用研究会 2013/1/13.
  29. H. Ohno,
    "Electric-field manipulation of magnetization",
    Sweden-Japan Workshop on Quantum Nano-Physics and Electronics (QNANO2013), 2013/1/14.（招待）
  30. S. Kanai, M. Yamanouchi, S. Ikeda, Y. Nakatani, F. Matsukura, and H. Ohno,
    "Magnetization switching in CoFeB/MgO by electric fields",
    Tohoku-Harvard Joint Workshop, New Directions in Materials for Nanoelectronics, Spintronics and Photonics, 2013/1/15.
  31. H. Ohno,
    "Physics and Materials of Perpendicular CoFeB-MgO Magnetic Tunnel Junction",
    Tohoku-Harvard Joint Workshop, New Directions in Materials for Nanoelectronics, Spintronics and Photonics, 2013/1/16.（招待）
  32. S. Ishikawa, H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, and H. Ohno,
    "Magnetic properties of MgO-[Co/Pt] multilayer with a CoFeB insertion layer",
    12th Joint Magnetism and Magnetic Materials/International Magnetics Conference, 2013/1/16.
  33. H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, K. Mizunuma, F. Matsukura, and H. Ohno,
    "MgO/CoFeB/Ta/CoFeB/MgO recording structure in magnetic tunnel junctions with perpendicular magnetic easy axis",
    12th Joint Magnetism and Magnetic Materials/International Magnetics Conference, 2013/1/17.
  34. 池田正二
    "不揮発性集積回路のための磁気トンネル接合の進展",
    独立行政法人 日本学術振興会薄膜第131委員会　並びに 半導体界面制御技術第154委員会　合同研究会 2013/1/18.
  35. M. Oogane, H. Saruyama, Y. Kurimoto, H. Naganuma, and Y. Ando,
    "L10-ordered MnAl alloy thin film with perpendicular magnetic anisotropy",
    12th Joint Magnetism and Magnetic Materials/International Magnetics Conference, 2013/1/18.
  36. M. Khan, H. Naganuma, M. Oogane and Y. Ando,
    "pMTJ with both top and bottom electrodes consist of L1o-FePd/CoFeB bilayer",
    12th Joint Magnetism and Magnetic Materials/International Magnetics Conference, 2013/1/18.
  37. 遠藤哲郎、小池洋紀、大澤隆、羽生貴弘、笠井直記、大野英男
    "省エネシステムのためのSTT-MRAMと、そのロジック応用",
    ゲートスタック研究会 2013/1/25.（招待）
  38. H. Ohno,
    "Spintronics makes CMOS VLSI nonvolatile",
    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, 2013/1/29.（招待）
  39. S. Kanai, M. Yamanouchi, S. Ikeda, Y. Nakatani, F. Matsukura, and H. Ohno,
    "Magnetic field angle dependence of the probabilities of electric-field induced magnetization switching",
    The 3rd CSIS International Symposium on Spintronics-based VLSIs and The11th RIEC International Workshop on Spintronics, 2013/1/31.
  40. M. N. I. Khan, H. Naganuma, M. Oogane and Y. Ando,
    "Dependence of perpendicular magnetic anisotropy of L10-FePd/CoFeB films on post-deposition annealing temperature",
    The 3rd CSIS International Symposium on Spintronics-based VLSIs and The11th RIEC International Workshop on Spintronics, 2013/1/31.
  41. S. Fukami, M. Yamanouchi, S. Ikeda and H. Ohno,
    "Depinning error rate of domain wall in Co/Ni nanowire",
    The 3rd CSIS International Symposium on Spintronics-based VLSIs and The11th RIEC International Workshop on Spintronics, 2013/1/31.
  42. H. Naganuma, K. Hatakeyama, G. Kim, Y. Kawada, M. N. I. Khan, N. Inami, M. Oogane, Y. Ando,
    "Spin torque diode effect in magnetic tunnel junction using L1o-ordered free layer",
    The 3rd CSIS International Symposium on Spintronics-based VLSIs and The11th RIEC International Workshop on Spintronics, 2013/1/31.
  43. L. Chen, F. Matsukura, and H. Ohno,
    "Electirical detection of ferromagnetic resonance in (Ga,Mn)As",
    The 3rd CSIS International Symposium on Spintronics-based VLSIs and The11th RIEC International Workshop on Spintronics, 2013/1/31.
  44. M. Yamanouchi , L. Chen, H. Sato, S. Fukami, S. Ikeda,.F. Matsukura, and H. Ohno,
    "Three terminal switching devices based on an interconnection material Cu",
    The 3rd CSIS International Symposium on Spintronics-based VLSIs and The11th RIEC International Workshop on Spintronics, 2013/1/31.（招待）
  45. F. Matsukura, S. Kanai, M. Yamanouchi, S. Ikeda, Y. Nakatani, and H. Ohno,
    "Electric field-induced magnetization switching in CoFeB",
    The 3rd CSIS International Symposium on Spintronics-based VLSIs and The11th RIEC International Workshop on Spintronics, 2013/1/31.（招待）
  46. M. Oogane, M. Kubota, H. Naganuma, and Y. Ando,
    "Perpendicular magnetic properties and magnetic damping constant of thin CoFeB films",
    The 3rd CSIS International Symposium on Spintronics-based VLSIs and The11th RIEC International Workshop on Spintronics, 2013/1/31.
  47. S. Ishikawa, H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, and H. Ohno,
    "Magnetic tunnel junctions consisting of Co/Pt multilayer and a CoFeB insertion layer with high thermal stability　",
    The 3rd CSIS International Symposium on Spintronics-based VLSIs and The11th RIEC International Workshop on Spintronics, 2013/1/31.
  48. T. Ohsawa, H. Koike, S. Miura, H. Honjo, K. Tokutome, S. Ikeda, T. Hanyu, H. Ohno, and T. Endoh,
    "A fine-grained power gating architecture for MTJ-based embedded memories　",
    The 3rd CSIS International Symposium on Spintronics-based VLSIs and The11th RIEC International Workshop on Spintronics, 2013/1/31.
  49. M. Oogane, H. Saruyama, Y. Kurimoto, H. Naganuma and Y. Ando,
    "Magnetic tunnel junctions using L10-ordered MnAl electrode",
    The 3rd CSIS International Symposium on Spintronics-based VLSIs and The11th RIEC International Workshop on Spintronics, 2013/1/31.（招待）
  50. K. Mizunuma, M. Yamanouchi, H. Sato, S. Ikeda, S. Kanai, F. Matsukura, and H. Ohno,
    "Measurement of magnetic properties in CoFeB-MgO p-MTJs by ferromagnetic resonance with homodyne detection technique　",
    The 3rd CSIS International Symposium on Spintronics-based VLSIs and The11th RIEC International Workshop on Spintronics, 2013/1/31.
  51. F. Iga, T. Ohsawa, S. Ikeda, T. Hanyu, H. Ohno, and T. Endoh,
    "Two-step writing method for STT-MTJ to improve switching probability and write-speed",
    The 3rd CSIS International Symposium on Spintronics-based VLSIs and The11th RIEC International Workshop on Spintronics, 2013/1/31.
  52. T. Endoh, S. Togashi, F. Iga, Y. Yoshida, T. Ohsawa, H. Koike, S. Fukami, S. Ikeda, N. Kasai, N. Sakimura, T. Hanyu, and H. Ohno,
    "600MHz Nonvolatile Latch Based on a New MTJ/CMOS Hybrid Circuit Concept",
    The 3rd CSIS International Symposium on Spintronics-based VLSIs and The11th RIEC International Workshop on Spintronics, 2013/1/31.
  53. S. Matsunaga and T. Hanyu,
    "Design of Low-Energy Nonvolatile TCAM Using Logic-in-Memory Architecture",
    The 3rd CSIS International Symposium on Spintronics-based VLSIs and The11th RIEC International Workshop on Spintronics, 2013/1/31.
  54. D. Suzuki and T. Hanyu,
    "Nonvolatile Look-up Table Circuit Using Three-Terminal MTJ-Based Logic-in-Memory Structure",
    The 3rd CSIS International Symposium on Spintronics-based VLSIs and The11th RIEC International Workshop on Spintronics, 2013/1/31.
  55. Tian Yu, H. Naganuma, N. Inami, M. Oogane, Yasuo Ando,
    "Bias voltage dependence of spin torque diode effect in CoFeB/MgO/CoFeB magnetic tunnel junction",
    The 3rd CSIS International Symposium on Spintronics-based VLSIs and The11th RIEC International Workshop on Spintronics, 2013/1/31.
  56. H. Koike, T. Ohsawa, and T. Endoh,
    "A New Sensing Scheme with High Signal Margin Suitable for Spin-Transfer Torque RAM",
    The 3rd CSIS International Symposium on Spintronics-based VLSIs and The11th RIEC International Workshop on Spintronics, 2013/1/31.
  57. H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, and H. Ohno,
    "Junction size dependence of intrinsic critical current and thermal stability of MgO/CoFeB/Ta/CoFeB/MgO recording structure",
    The 3rd CSIS International Symposium on Spintronics-based VLSIs and The 11th RIEC International Workshop on Spintronics, 2013/1/31.（招待）
  58. T. Hanyu,
    "Towards a New Paradigm LSI Based on Nonvolatile Logic-in-Memory Architecture　",
    The 3rd CSIS International Symposium on Spintronics-based VLSIs and The11th RIEC International Workshop on Spintronics, 2013/2/1.
  59. S. Matsunaga, S. Miura, H. Honjo, K. Kinoshita, S. Ikeda, T. Endoh, H. Ohno, and T. Hanyu,
    "Standby-Power-Free Fully Parallel TCAM Chip Based on Compact Nonvolatile Logic-in-Memory Cell Structure　",
    The 3rd CSIS International Symposium on Spintronics-based VLSIs and The11th RIEC International Workshop on Spintronics, 2013/2/1.（招待）
  60. M. Sihotang, S. Matsunaga, N. Sakimura, R. Nebashi, Y. Tsuji, A. Morioka, T. Sugibayashi, S. Miura, H. Honjo, K. Kinoshita, S. Ikeda, H. Sato, S. Fukami, M. Natsui, T. Endoh, H. Ohno, T. Hanyu,
    "Design of a No-Standby Energy Pipelined LSI Processor Using MTJ-Based Nonvolatile Logic-in-Memory Architecture",
    ISSCC （2013 IEEE INTERNATIONAL SOLID-STATE　CIRCUITS CONFERENCE） Student Research Preview, 2013/2/17.
  61. H. Ohno,
    "Ferromagnetism in Semiconductors",
    AIMR International Symposium 2013 (AMIS 2013), 2013/2/19.（招待）
  62. F. Matsukura, L. Chen, and H. Ohno,
    "dc voltages induced by magnetization dynamics in (Ga,Mn)As-based structures",
    The 2nd AIMR-CNSI Workshop, 2013/2/22.（招待）
  63. M. Yamanouchi, L. Chen, J. Kim, M. Hayashi, H. Sato, S. Fukami, S. Ikeda, F. Matsukura, and H. Ohno,
    "Three terminal magnetic tunnel junctions with CuIr channel",
    International Workshop on Spin-Orbit Torque 2013, 2013/2/25.
  64. H. Ohno,
    "Two and three terminal non-volatile spintronics devices for VLSI applications",
    International Workshop on Spin-Orbit Torque 2013, 2013/2/25.（招待）
  65. 水沼広太朗、山ノ内路彦、佐藤英夫、池田正二、松倉文礼、大野英男
    "CoFeB-MgO垂直磁化容易磁気トンネル接合における反転閾値電流密度の素子サイズ依存性",
    第60回応用物理学会春季学術講演会 2013/3/28.
  66. Tian Yu, H. Naganuma, N. Inami, M. Oogane, Y. Ando
    "Spin torque diode effect in CoFeB/MgO/CoFeB magnetic tunnel junction",
    第60回応用物理学会春季学術講演会 2013/3/29.
  67. 深見俊輔、山ノ内路彦、 池田正二、 大野英男
    "３端子磁壁移動デバイスの開発"
    第60回応用物理学会春季学術講演会 2013/3/29.（招待）
  68. 石川慎也、佐藤英夫、山ノ内路彦、池田正二、深見俊輔、松倉文礼、大野英男
    "Co/Pt多層膜とCoFeBの積層膜を用いたMgO障壁磁気トンネル接合",
    第60回応用物理学会春季学術講演会 2013/3/29.
  69. 金井駿、山ノ内路彦、池田正二、仲谷栄伸、松倉文礼、大野英男
    "dc voltages induced by magnetization dynamics in (Ga,Mn)As-based structures",
    第60回応用物理学会春季学術講演会 2013/3/29.
  70. M. N. I. Khan, H. Naganuma, M. Oogane and Y. Ando,
    "Magnetic tunnel junctions with L10-ordered FePd electrod",
    第60回応用物理学会春季学術講演会 2013/3/29.
  71. H. Saruyama, Y. Kurimoto, M. Oogane, H. Naganuma, and Y. Ando,
    "Tunnel Magnetoresistance Effect in Magnetic Tunnel Junctions with L10-ordered MnAl electrode",
    第60回応用物理学会春季学術講演会 2013/3/30.