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発表論文 (2016)

  1. S. Kanai, F. Matsukura, and H. Ohno,
    "Electric-field-induced magnetization switching in CoFeB/MgO magnetic tunnel junctions with high junction resistance",
    Applied Physics Letters, Vol. 108, 192406, 2016/05/10.
  2. T. Okuno, K. -J. Kim, T. Tono, S. Kim, T. Moriyama, H. Yoshikawa, A. Tsukamoto, and T. Ono,
    "Temperature dependence of magnetoresistance in GdFeCo/Pt heterostructure",
    Applied Physics Express, Vol. 9, 073001, 2016/06/02.
  3. T. Endoh, H. Koike, S. Ikeda, T. Hanyu, H. Ohno,
    "An Overview of Nonvolatile Emerging Memories — Spintronics for Working Memories —",
    IEEE Journal on Emerging and Selected Topics in Circuits and Systems (JETCAS), Vol. 6, No. 2, pp. 109-119, 2016/06/09.
  4. K. Watanabe, S. Fukami, H. Sato, F. Matsukura, and H. Ohno,
    "Magnetic Properties of CoFeB–MgO Stacks With Different Buffer-Layer Materials (Ta or Mo)",
    IEEE Transactions on Magnetics, Vol. 52, No. 7, 3400904, 2016/06/22.
  5. S. Ishikawa, E. C. I. Enobio, H. Sato, S. Fukami, F. Matsukura, and H. Ohno,
    "Current-Induced Magnetization Switching of CoFeB/Ta/[Co/Pd (Pt)]-Multilayers in Magnetic Tunnel Junctions With Perpendicular Anisotropy",
    IEEE Transactions on Magnetics, Vol. 52, No. 7, 3400704, 2016/06/22.
  6. T. Dohi, S. Kanai, A. Okada, F. Matsukura, and H. Ohno,
    "Effect of electric-field modulation of magnetic parameters on domain structure in MgO/CoFeB",
    AIP Advances, Vol. 6, 075017, 2016/07/22.
  7. T. Hanyu, T. Endoh, D. Suzuki, H. Koike, Y. Ma, N. Onizawa, M. Natsui, S. Ikeda, and H. Ohno,
    "（Invited paper） Standby-Power-Free Integrated Circuits Using MTJ-Based VLSI Computing",
    Proceedings of the IEEE, Vol. 104, No. 10, 2016/09/07.
  8. H. Mazraati, T. Q. Le, A. A. Awad, S. Chung, E. Hirayama, S. Ikeda, F. Matsukura, H. Ohno, and J. Åkerman,
    "Free- and reference-layer magnetization modes versus in-plane magnetic field in a magnetic tunnel junction with perpendicular magnetic easy axis",
    Physical Review B, Vol. 94, 104428, 2016/09/26.
  9. J. Torrejon, J. Kim, J. Sinha and M. Hayashi,
    "Spin-orbit effects in CoFeB/MgO heterostructures with heavy metal underlayers",
    SPIN, Vol. 6, No. 2, pp. 1640002, 2016/10/14.
  10. C. Zhang, S. Fukami, K. Watanabe, A. Ohkawara, S. DuttaGupta, H. Sato, F. Matsukura, and H. Ohno,
    "Critical role of W deposition condition on spin-orbit torque induced magnetization switching in nanoscale W/CoFeB/MgO",
    Applied physics letters, Vol. 109, 192405, 2016/11/08.
  11. J. Torrejon, E. Martinez, M. Hayashi,
    "Tunable inertia of chiral magnetic domain walls",
    Nature Communications, Vol. 7, 13533, 2016/11/24.
  12. M. Shinozaki, E. Hirayama, S. Kanai, H. Sato, F. Matsukura, and H. Ohno,
    "Damping constant in a free layer in nanoscale CoFeB/MgO magnetic tunnel junctions investigated by homodyne-detected ferromagnetic resonance",
    Applied Physics Express, Vol. 10, 013001, 2016/12/01.
  13. W. A. Borders, H. Akima, S. Fukami, S. Moriya, S. Kurihara, Y. Horio, S. Sato, and H. Ohno,
    "Analogue spin-orbit torque device for artificial neural network based associative memory operation",
    Applied Physics Express, Vol. 10, 013007, 2016/12/20.
  14. S. DuttaGupta, S. Fukami, B. Kuerbanjiang, H. Sato, F. Matsukura, V. K. Lazarov, and H. Ohno,
    "Magnetic domain-wall creep driven by field and current in Ta/CoFeB/MgO",
    AIP Advances, Vol. 7, 055918, 2017/01/20.
  15. R. P. del Real, V. Raposo, E. Martinez and M. Hayashi,
    "Current-Induced Generation and Synchronous Motion of Highly Packed Coupled Chiral Domain Walls",
    Nano Letters, Vol. 17, pp. 1814-1818, 2017/01/31.
  16. A. Kurenkov, C. Zhang, S. DuttaGupta, S. Fukami, and H. Ohno,
    "Device-size dependence of field-free spin-orbit torque induced magnetization switching in antiferromagnet/ferromagnet structures",
    Applied Physics Letters, Vol. 110, 092410, 2017/03/01.
  17. N. Onizawa, T. Hanyu,
    "Soft/Write-Error-Resilient CMOS/magnetic tunnel junction Nonvolatile Flip-Flop Based on Majority-Decision Shared Writing",
    Japanese Journal of Applied Physics, Vol 56, 04CF12, 2017/03/21.
  18. K.-J. Kim, Y. Yoshimura, W. S. Ham, R. Ernst, Y. Hirata, T. Li, S. Kim, T. Moriyama, Y. Nakatani, and T. Ono,
    "Energy-efficient writing scheme for magnetic domain-wall motion memory",
    Applied Physics Express, Vol. 10, 043002, 2017/03/23.
  19. A. Okada, S. He, B. Gu, S. Kanai, A. Soumyanarayanan, S. T. Lim, M. Tran, M. Mori, S. Maekawa, F. Matsukura, H. Ohno, and C. Panagopoulos,
    "Magnetization dynamics and its scattering mechanism in thin CoFeB films with interfacial anisotropy",
    Proceedings of the National Academy of Sciences of the United States of America, PNAS Early Edition, 2017/03/24.
  20. J. J. Bean, M. Saito, S. Fukami, H. Sato, S. Ikeda, H. Ohno, Y. Ikuhara and K. P. McKenna,
    "Atomic structure and electronic properties of MgO grain boundaries in tunnelling magnetoresistive devices",
    Scientific Reports, 7, 45594,　DOI: 10.1038/srep, 45594, 2017/4/4.
  21. M. Oogane, K. Watanabe, H. Saruyama, M. Hosoda, S. Parvin, Y. Kurimoto, M. Kubota, Y. Ando,
    "L10-ordered MnAl Thin Films with High Perpendicular Magnetic Anisotropy",
    Japanese Journal of Applied Physics, Vol. 56, 0802A2, 2017/06/01.
  22. K. Watanabe, M. Oogane, Y. Ando,
    "Cobalt Substituted L10-MnAl Thin Films with Large Perpendicular Magnetic Anisotropy",
    Japanese Journal of Applied Physics, Vol 56, 0802B1, 2017/06/01.
  23. S. Fukami, H. Ohno,
    "Magnetization switching schemes for nanoscale three-terminal spintronics devices",
    Japanese Journal of Applied Physics, Vol 56, 0802A1, 2017/06/01.
  24. K. Watanabe, S. Fukami, H. Sato, S. Ikeda, F. Matsukura, and H. Ohno,
    "Annealing temperature dependence of magnetic properties of CoFeB/MgO stacks on different buffer layers",
    Japanese Journal of Applied Physics, Vol 56, 0802B2, 2017/06/01.
  25. Y. Narita, Y. Takahashi, M. Harada, K. Oikawa, D. Kobayashi, K. Hirose, H. Sato, S. Ikeda, T. Endoh, H. Ohno,
    "Fast neutron tolerance of the perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with junction diameters between 46 and 64 nm",
    Japanese Journal of Applied Physics, Vol 56, 0802B3, 2017/06/06.
  26. S. Kanai, F. Matsukura, and H. Ohno,
    "Eｌectric-field-induced magnetization switching in CoFeB/MgO magnetic tunnel junctions",
    Japanese Journal of Applied Physics, Vol 56, 0802A3, 2017/06/09.
  27. D. Kobayashi, K. Hirose, T. Makino, S. Onoda, T. Ohshima, S. Ikeda, H. Sato, E. C. I. Enobio, T. Endoh, and H. Ohno,
    "Soft errors in 10-nm-scale magnetic tunnel junctions exposed to high-energy heavy-ion radiation",
    Japanese Journal of Applied Physics, Vol 56, 0802B4, 2017/06/22.
  28. K. Hirose, D. Kobayashi, T. Ito, and T. Endoh,
    "Memory reliability of spintronics materials and devices for disaster-resilient computing against radiation-induced bit flips on the ground",
    Japanese Journal of Applied Physics, Vol 56, 0802A5, 2017/06/30.
  29. R. Nebashi, N. Sakimura and T. Sugibayashi,
    "Soft-error tolerance and energy consumption evaluation of embedded computer with magnetic random access memory in practical systems using computer simulations",
    Japanese Journal of Applied Physics, Vol. 56, 0802B6, 2017/07/04.
  30. H. Sato, S. Ikeda, and H. Ohno,
    "Magnetic tunnel junctions with perpendicular easy axis at junction diameter of less than 20 nm",
    Japanese Journal of Applied Physics, Vol. 56, 0802A6, 2017/07/24.
    31.