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2015 Conferences

  1. S. Fukami, T. Anekawa, C. Zhang, and H. Ohno,
    "Proposal and demonstration of a new spin-orbit torque induced switching device",
    IEEE International Magnetics Conference (INTERMAG), Beijing, China, May, 2015.
  2. H. Ohno and S. Fukami,
    "Three-terminal spintronics memory devices with perpendicular anisotropy",
    IEEE International Magnetics Conference (INTERMAG), Beijing, China, May, 2015. (invited)
  3. T. Ono,
    "Domain wall dynamics under Dzyaloshinskii-Moriya interaction",
    International Workshop on Topological Structures in Ferroic Materials, Sydney, Australia, May, 2015. (invited)
  4. H. Ohno,
    "Spintronic nano-devices for nonvolatile VLSIs",
    Frontiers in Quantum Materials and Devices & Tohoku/Harvard Workshop, Boston, USA, May, 2015. (invited)
  5. H. Ohno,
    "Nanoscale magnetic tunnel junction",
    5th STT-MRAM Global Innovation Forum, Tokyo, Japan, May, 2015. (invited)
  6. H. Ohno,
    "Nano-Scale Magnetic Tunnel Junction Materials and Devices - Toward Nonvolatile VLSI -",
    International Conference Spin Physics, Spin Chemistry and Spin Technology, Saint Petersburg, Russia, June, 2015. (invited)
  7. H. Sato, Y. Takeuchi, N. Ohshima, S. Kubota, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, and H. Ohno,
    "Properties of CoFeB-MgO magnetic tunnel junctions with perpendicular easy axis for spintronics based VLSI applications",
    2015 Spintronics workshop on LSI, Kyoto, Japan, June, 2015. (invited)
  8. S. DuttaGupta,
    "Domain wall creep driven by adiabatic spin transfer torque in magnetic metals",
    York-Tohoku-Kaiserslautern Symposium on New Conecept Spintronics Devices, York, UK, June, 2015.
  9. M. Oogane, Y. Kurimoto, K. Mukaiyama, M. I. Khan, H. Saruyama, M. Hosoda, K. Hatakeyama, G. Kim, H. Naganuma and Y. Ando,
    "Perpendicularly magnetized L10-ordered alloys for magnetic tunnel junctions",
    York-Tohoku-Kaiserslautern Research Symposium on New-Concept Spintronics Devices, York, UK, June, 2015. (invited)
  10. H. Ohno,
    "Nanoscale Magnetic Tunnel Junction",
    York-Tohoku-Kaiserslautern Symposium on New Conecept Spintronics Devices, York, UK, June, 2015. (invited)
  11. F.Matsukura,
    "DC Voltage in Pt/(Ga,Mn) as Under Ferromagnetic Resonance",
    York-Tohoku-Kaiserslautern Symposium on New Conecept Spintronics Devices, York, UK, June, 2015. (invited)
  12. H. Honjo, H. Sato, S. Ikeda, S. Sato, T. Watanebe, S. Miura, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, H. Koike, M. Muraguchi, M. Niwa, K. Ito, H. Ohno and T. Endoh,
    "10 nmφ perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction with over 400oC high thermal tolerance by boron diffusion control",
    2015 Symposium on VLSI Technology, Kyoto, Japan, June, 2015.
  13. H. Ohno,
    "Toward Ultra-low Power Microprocessor Using Spintronics Technology",
    1st ImPACT International Symposium on Spintronic Memory, Circuit and Storage, Tokyo, Japan, June, 2015. (invited)
  14. E. C. I. Enobio, H. Sato, S. Fukami, F. Matsukura, and H. Ohno,
    "Vector Network Analyer - Ferromagnetic Resonance Measurements on CoFeB-MgO stack with Perpendicular easy axis",
    8th International Conference on Materials for Advanced Technologies of the Materials Research Society of Singapore (2015 ICMAT), Singapore, June, 2015.
  15. A. Okada, Y. Hashimoto, S. Kanai, F. Matsukura, and H. Ohno,
    "Electric-field dependence of magnetic anisotropy and damping constant in Ta/CoFeB/MgO structures",
    8th International Conference on Materials for Advanced Technologies of the Materials Research Society of Singapore (2015 ICMAT), Singapore, June, 2015.
  16. T. Ono,
    "Domain wall dynamics under Dzyaloshinskii-Moriya interaction",
    Recent Trends in Nanomagnetism, Spintronics and their Applications 2015, Ordizia, Spain, July, 2015. (invited)
  17. H. Ohno,
    "Spintronics for Stand-by Power Free VLSI",
    ICMAT&IUMRS-ICA2015, Singapore, July, 2015. (invited)
  18. H. Ohno,
    "Nanoscale Spintronics Materials and Devices",
    ICMAT&IUMRS-ICA2015, Singapore, July, 2015. (invited)
  19. S. Fukami, C. Zhang, S. DuttaGupta, H. Ohno,
    "Spin-orbit torque switching in a ferromagnet/antiferromagnet bilayer system",
    20th International Conference on Magnetism (ICM2015), Barcelona, Spain, July, 2015.
  20. C. Zhang, S. Fukami, H. Sato, F. Matsukura, and H. Ohno,
    "Spin-orbit torque induced magnetization switching in Ta/CoFeB/MgO heterostructure with a diameter down to 30 nm",
    20th International Conference on Magnetism (ICM2015), Barcelona, Spain, July, 2015.
  21. N. Onizawa, A. Mochizuki, A. Tamakoshi, and T. Hanyu,
    "A Sudden Power-Outage Resilient Nonvolatile Microprocessor for Immediate System Recovery",
    NANOARCH 2015, Boston, USA, July, 2015.
  22. Y. Takeuchi, E. C. I. Enobio, H. Sato, S. Fukami, F. Matsukura, and H. Ohno,
    "Temperature dependence of intrinsic critical current of CoFeB-MgO magnetic tunnel junctions with perpendicular easy axis",
    22nd International Colloquium on Magnetic Films and Surfaces (ICMFS), Crakow, Poland, July, 2015.
  23. H. Ohno,
    "Nano-Spintronics Devices for VLSI Integration",
    Gordon Research Conference- Spin Dynamics in Nanostructures, Hong Kong University of Science and Technology, Hong Kong, July, 2015. (invited)
  24. T. Ono,
    "Magnetic domain wall dynamics under Dzyaloshinskii-Moriya interaction",
    4th Internatinal Workshop on Magnonics, Seeon, Germany, August, 2015. (invited)
  25. S. Kanai, M. Gajek, D.C. Worledge, F. Matsukura, and H. Ohno,
    "dc-bias dependence of ferromagnetic resonance spectra of a CoFeB-MgO based magnetic tunnel junction",
    8th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH VIII), Basel, Germany, August, 2015.
  26. S. Fukami, H. Ohno,
    "Spin-orbit torque induced magnetization switching for three-terminal spintronics devices",
    2nd Spin, Waves and Interactions, Greifswald, Germany, September, 2015. (invited)
  27. F. Matsukura,
    "Effects of magnetic phase separation in (Ga,Mn)As",
    E-MRS 2015 fall meeting, Poland, September, 2015. (invited)
  28. H. Ohno,
    "Spintronics Nano-Devices for Nonvolatile VLSIs",
    Sweden-Japan QNANO Workshop, Hindas, Sweden, September, 2015. (invited)
  29. H. Ohno,
    "Nonvolatile VLSI Made Possible by Spintronics",
    4th Winton Symposium, Cambridge, UK, September, 2015. (invited)
  30. S. Fukami, H. Sato, and H. Ohno,
    "Spintronics memory devices for ultralow-power and high-performance integrated circuits",
    2015 International Conference on Solid State Devices and Materials (SSDM2015), Sapporo, September, 2015. (invited)
  31. H. Sato, E.C.I. Enobio, S. Fukami, F. Matsukura, and H. Ohno,
    "Properties of perpendicular-anisotropy magnetic tunnel junctions with single and double CoFeB-MgO interface",
    6th Annual Conference on Magnetics, NTU, Singapore, October, 2015. (invited)
  32. T. Hanyu, M. Natsui, D. Suzuki, A. Mochizuki, N. Onizawa, S. Ikeda, T. Endoh, and H. Ohno,
    "Challenge of MTJ-Based Nonvolatile Logic-in-Memory Architecture for Ultra Low-Power and Highly Dependable VLSI Computing",
    SOI-3D-Subthreshold Microelectronics Technology Unified Conference (IEEE S3S), California, USA, October, 2015. (invited)
  33. H. Ohno,
    "Spintronics Nano-Devices for Nonvolatile VLSIs",
    Electrical and Computer Engineering and Materials University of California & California NanoSystems Institute (CNSI), University of California, Santa Barbara, USA, October, 2015. (invited)
  34. E. C. I. Enobio, H. Sato, S. Fukami, F. Matsukura, and H. Ohno,
    "Improving the sensitivity of vector-network-analyzer ferromagnetic resonance measurement by varying the coplanar waveguide size",
    2015-International Conference on Applied Materials and Optical Systems (ICAMOS), Cavite State University (CvSU), The Phiippines, October, 2015. (invited)
  35. A. Mochizuki, N. Onizawa, A. Tamakoshi, and T. Hanyu,
    "Multiple-Event-Transient Soft-Error Gate-Level Simulator for Harsh Radiation Environments",
    TENCON 2015, Macau, China, November, 2015.
  36. H. Ohno,
    "Spintronics materials and devices for nonvolatile CMOS VLSIs",
    16th RIES-Hokudai International Symposium, Sapporo, Japan, November, 2015. (invited)
  37. S. DuttaGupta, S. Fukami, M. Yamanouchi, C. Zhang, H. Sato, F. Matsukura, and H. Ohno,
    "Universality class for adiabatic spin-transfer torque induced domain wall creep in magnetic metal",
    JSPS Core-to-Core Workshop on New-Concept Spintronic Devices, Sendai, Japan, November, 2015. (invited)
  38. H. Sato1, E.C.I. Enobio, N. Ohshima, S. Fukami1, F. Matsukura, and H. Ohno,
    "Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions for low power consumption non-volatile VLSI",
    3rd International Workshop on Fluid and Material Sciences in Cooperation between KTH and Tohoku University, KTH, Sweden, November, 2015. (invited)
  39. M. Oogane,
    "Tunnel magneto resistance effect in MTJs with Mn-based ordered alloys",
    13th RIEC International Workshop on Spintronics, Sendai, Japan, November, 2015. (invited)
  40. S. DuttaGupta, S. Fukami, C. Zhang, H. Sato, M. Yamanouchi, F. Matsukura, and H. Ohno,
    "Different universality classes for current and field driven domain wall creep in a magnetic metal",
    13th RIEC International Workshop on Spintronics, Sendai, Japan, November, 2015.
  41. K. Watanabe, H. Sato, S. Fukami, F. Matsukura, and H. Ohno,
    "Layer Thicknesses and Annealing Condition Dependence of Magnetic Properties of CoFeB-MgO Structure",
    13th RIEC International Workshop on Spintronics, Sendai, Japan, November, 2015.
  42. T. Anekawa, C. Zhang, S. Fukami, and H. Ohno,
    "A three-terminal spin-orbit torque device with a new configuration",
    13th RIEC International Workshop on Spintronics, Sendai, Japan, November, 2015.
  43. E. C. I. Enobio, H. Sato, S. Fukami, F. Matsukura, and H. Ohno,
    "CoFeB thickness dependence of damping constant for single and double CoFeB-MgO interface structures",
    13th RIEC International Workshop on Spintronics, Sendai, Japan, November, 2015.
  44. S. Fukami, C. Zhang, S. DuttaGupta, A. Kurenkov, and H. Ohno,
    "Spin-orbit torque switching for three-terminal spintronics devices",
    13th RIEC International Workshop on Spintronics, Sendai, Japan, November, 2015. (invited)
  45. T. Ono,
    "Orbital Magnetism on the Dzyaloshinskii-Moriya Interaction",
    13th RIEC International Workshop on Spintronics, Sendai, Japan, November, 2015. (invited)
  46. S. Miyakozawa, L. Chen, F. Matsukura, and H. Ohno,
    "Temperature dependence of magnetotransport properties in (Ga,Mn)As:Li",
    13th RIEC International Workshop on Spintronics, Sendai, Japan, November, 2015.
  47. C. Zhang, S. Fukami, H. Sato, F. Matsukura, and H. Ohno,
    "Magnetization switching via Spin-orbit torque in nano-scale Ta/CoFeB/MgO",
    13th RIEC International Workshop on Spintronics, Sendai, Japan, November, 2015.
  48. A. Okada, Y. Hashimoto, S. Kanai, F. Matsukura, and H. Ohno,
    "Electrical modulaiton of damping constant in Ta/CoFeB/MgO with perpendicuarl easy axis",
    13th RIEC International Workshop on Spintronics, Sendai, Japan, November, 2015.
  49. M. Hayashi,
    "Electrically and thermally generated spin current in heavy metals",
    13th RIEC International Workshop on Spintronics, Sendai, Japan, November, 2015. (invited)
  50. T. Ono,
    "Orbital Magnetism on the Dzyaloshinskii-Moriya Interaction",
    Korea-Japan Spin-orbit workshop, Korean Research Institute for Science and Standards, Daejeon, Korea, November, 2015. (invited)
  51. T. Ono,
    "Current-induced magnetic domain wall motion",
    International USMM & CMSI Workshop, Koshiba hall, University of Tokyo, January, 2016. (invited)
  52. S. Ishikawa, H. Sato, S. Fukami, F. Matsukura, and H. Ohno,
    "Current induced magnetization switching of CoFeB/Ta/[Co/Pd (Pt)]-multilayer in magnetic tunnel junctions with perpendicular anisotropy",
    13th Joint MMM-Intermag Conference, San Diego, USA, January, 2016.
  53. K. Watanabe, H. Sato, S. Fukami, F. Matsukura, and H. Ohno,
    "Dependence of Magnetic Properties of CoFeB-MgO on Buffer Layer Materials",
    13th Joint MMM-Intermag Conference, San Diego, USA, January, 2016.
  54. S. Kanai, Y. Nakatani, H. Sato, F. Matsukura, and H. Ohno,
    "Electric field control of magnetism and magnetization switching in CoFeB-MgO",
    13th Joint MMM-Intermag Conference, San Diego, USA, January, 2016. (invited)
  55. T. Ono,
    "Soliton-like magnetic domain wall motion induced by the interfacial Dzyaloshinskii-Moriya interaction",
    American Physical Society March Meeting, Baltimore, USA, March, 2016. (invited)
  56. H. Ohno,
    "Two-and Three-terminal Spintronics Devices",
    2nd CIES Technology Forum, Sendai, Japan, March, 2016. (invited)
  57. T. Ono,
    "Soliton-like magnetic domain wall motion induced by the interfacial Dzyaloshinskii-Moriya interaction",
    Workshop on Computational Nano-Materials Design and Realization for Energy-Saving and Energy-Creation Materials, Osaka University, March, 2016. (invited)
  58. F. Matsukura,
    "Electric-field Effect on Damping Constant of (Ga, Mn)As",
    Workshop on Computational Nano-Materials Design and Realization for Energy-Saving and Energy-Creation Materials, Osaka University, March, 2016. (invited)
  59. H. Ohno,
    "Efficiency of Spintronic Nanodevices",
    Spintronics Meeting in Lanna, Vila Lanna, Prague, Czech, March, 2016. (invited)