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2014 Conferences

  1. F. Matsukura,
    "dc voltages in (Ga,Mn)As based strucures under ferromagnetic resonance",
    4th International Conference on Superconductivity and Magnetism (ICSM2014), Antalya, Turkey, April, 2014.（invited）
  2. N. Sakimura, R. Nebashi, H. Honjo, S. Fukami, Y. Tsuji, A. Morioka, N. Kasai, H. Ohno, T. Hanyu, T. Sugibayashi,
    "Three-terminal spintronics cells for high-speed and nonvolatile VLSIs",
    IEEE International Magnetics Conference (Intermag 2014), Dresden, Germany, May, 2014.（invited）
  3. N. Onizawa, S. Matsunaga, and T. Hanyu,
    "A Compact Soft-Error Tolerant Asynchronous TCAM Based on a Transistor/Magnetic-Tunnel-Junction Hybrid Dual-Rail Word Structure",
    20th IEEE International Symposium on Asynchronous Circuits and Systems (ASYNC), Potsdam, Germany, May, 2014.
  4. N. Onizawa, S. Matsunaga, N. Sakimura, R. Nebashi, T. Sugibayashi, and T. Hanyu,
    "oft-Delay-Error Evaluation in Content-Addressable Memory",
    IEEE 44th International Symposium on Multiple-Valued Logic (ISMVL 2014), Bremen, Germany, May, 2014.
  5. S. Ikeda, H. Sato, E. C. I. Enobio, Y. Horikawa, S. Ishikawa, M. Yamanouchi, S. Fukami, S. Kanai, F. Matsukura, T. Endoh and H. Ohno,
    "Magnetic tunnel junctions with (Co)FeB-MgO double-interface recording structure for nonvolatile VLSIs",
    2014 Spintronics Workshop on LSI, Hilton Hawaiian Village, Honolulu, Hawaii, USA, June, 2014.（invited）
  6. N. Onizawa, S. Matsunaga, and T. Hanyu,
    "Design of a Soft-Error Tolerant 9-Transistor/6-Magnetic-Tunnel-Junction Hybrid Cell Based Nonvolatile TCAM",
    12th IEEE International New Circuits and Systems Conference (NEWCAS 2014), Trois-Rivières, Canada, June, 2014.
  7. S. Fukami and H. Ohno,
    "Current-induced domain wall motion in Co/Ni wires for nonvolatile memories and logic circuits",
    12th RIEC International Workshop on Spintronics, Sendai, Japan, June, 2014.（invited）
  8. E. Hirayama, S. Kanai, K. Sato, M. Yamanouchi, H. Sato, S. Ikeda, F. Matsukura, and H. Ohno,
    "In-plane Anisotropy in a CoFeB Magnetic Tunnel Junction",
    12th RIEC International Workshop on Spintronics, Sendai, Japan, June, 2014.
  9. Y. Horikawa, S. Ishikawa, S. Ikeda, H. Sato, S. Fukami, M. Yamanouchi, F. Matsukura, and H. Ohno,
    "MgO cap thickness dependence of interfacial anisotropy of MgO/FeB/MgO structure",
    12th RIEC International Workshop on Spintronics, Sendai, Japan, June, 2014.
  10. Y. Takeuchi, S. Ishikawa, H. Sato, S. Ikeda, M. Yamanouchi, S. Fukami, F. Matsukura, and H. Ohno,
    "Temperature dependence of thermal stability of CoFeB-MgO perpendicular easy-axis magnetic tunnel junction",
    12th RIEC International Workshop on Spintronics, Sendai, Japan, June, 2014.
  11. S. Ishikawa, H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, and H. Ohno,
    "High thermal stability of magnetic tunnel junction with CoFeB/Ta/[Co/Pt] multilayer ferromagnetic electrode",
    12th RIEC International Workshop on Spintronics, Sendai, Japan, June, 2014.
  12. C. Zhang, M. Yamanouchi, H. Sato, S. Fukami, S. Ikeda, F. Matsukura, and H. Ohno,
    "In-plane current-induced effective fields and magnetization switching in Ta/CoFeB/MgO structures",
    12th RIEC International Workshop on Spintronics, Sendai, Japan, June, 2014.
  13. S. D’Ambrosio, L. Chen, H. Nakayama, F. Matsukura, T. Dietl, and H. Ohno,
    "dc voltage measured in Py/ZnO bilayer under ferromagnetic resonance",
    12th RIEC International Workshop on Spintronics, Sendai, Japan, June, 2014.
  14. S. DuttaGupta, S. Fukami, M. Yamanouchi, C. Zhang, H. Sato, S. Ikeda, F. Matsukura, and H. Ohno,
    "Current and field induced domain wall creep in Ta/CoFeB/MgO wire",
    12th RIEC International Workshop on Spintronics, Sendai, Japan, June, 2014.
  15. L.Chen, F. Matsukura, H. Ohno,
    "Magnetization dynamics related phenomena in (Ga,Mn)As based structures",
    12th RIEC International Workshop on Spintronics, Sendai, Japan, June, 2014.（invited）
  16. S. Kanai, Y. Nakatani, M. Yamanouchi, S. Ikeda, H. Sato, F. Matsukura, and H. Ohno,
    "Magnetization Switching Induced by Electric Field",
    12th RIEC International Workshop on Spintronics, Sendai, Japan, June, 2014.（invited）
  17. H. Ohno,
    "Current status and prospects of magnetoresistive random access memory technology",
    6th Forum on New Materials (CIMTEC), Montecatini, Italy, June, 2014.（invited）
  18. T. YU, H. Naganuma, N. Inami, Y. Kawada, M. Oogane, and Y. Ando,
    "Effect of microwave on magnetization switching in magnetic tunnel junction",
    IEEE International Conference on Microwave Magnetics 2014, Sendai, Japan, July, 2014.
  19. S. Kanai, H. Sato, M. Yamanouchi, S. Ikeda, Y. Nakatani, . Matsukura, and H. Ohno,
    "Magnetization switching in a CoFeB/MgO magnetic tunnel junction by the application of two successive voltage pulses",
    8th International Conference on Physics and Applications of Spin Phenomena in Solids (PASPS VIII), Washington D.C., USA, July, 2014.
  20. H. Ohno,
    "Spintronics for VLSI",
    8th International Conference on Physics and Applications of Spin Phenomena in Solids (PASPS VIII), Washington D. C., U. S. A., July, 2014.（invited）
  21. S. Fukami, C. Zhang, and H. Ohno,
    "Magnetic domain wall motion and spin-orbit torque induced magnetization switching for three-terminal spintronics devices",
    The 6th IEEE International Nanoelectronics Conference (IEEE INEC 2014), Hokkaido University, July, 2014.（invited）
  22. H. Ohno,
    "From compound semiconductors to spintronics",
    2014 Lester Eastman Conference on High Performance Devices, Cornell University, Ithaca, NY, USA, August, 2014.（invited）
  23. L. Chen, F. Matsukura, T. Dietl, and H. Ohno,
    "The effect of electric-field on damping constant of ferromagnetic semiconductor (Ga,Mn)As",
    32nd International Conference on the Physics of Semiconductors (ICPS), Austin, USA, August, 2014.
  24. H. Ohno,
    "Properties of CoFeB-MgO magnetic tunnel junctions down to 11 nm",
    SPIE Optics + Photonics 2014, San Diego Convention Center, San Diego, CA, USA, August, 2014.（invited）
  25. E. Hirayama, S. Kanai, K. Sato, M. Yamanouchi, H. Sato, S. Ikeda, F. Matsukura, and H. Ohno,
    "In-plane Anisotropy of a CoFeB-MgO Magnetic Tunnel Junction with Perpendicular Magnetic Easy Axis",
    International Conference on Solid State Devices and Materials, Tsukuba, Japan, September, 2014.
  26. K. Watanabe, S. Ishikawa, H. Sato, S. Ikeda, M. Yamanouchi, S. Fukami, F. Matsukura, and H. Ohno,
    "Dependence of magnetic properties of MgO/CoFeB/Ta stacks on CoFeB and Ta thicknesses",
    2014 International Conference on Solid State Devices and Materials (SSDM 2014), Tsukuba, Japan, September, 2014.
  27. H. Sato, T. Yamamoto, E. C. I. Enobio, M. Yamanouchi, S. Ikeda, S. Fukami, K. Kinoshita, F. Matsukura, N. Kasai, and H. Ohno,
    "Switching current and thermal stability factor of perpendicular magnetic tunnel junction with MgO/CoFeB/Ta/CoFeB/MgO recording structure scaling down to 1X nm",
    2014 International Conference on Solid State Devices and Materials (SSDM 2014), Tsukuba, Japan, September, 2014.（invited）
  28. H. Ohno,
    "Thermal stability and threshold current of nanoscale magnetic tunnel junctions",
    International Workshop on Nanomaterials (M-SNOWS), Nancy, France, September, 2014.（invited）
  29. H. Ohno,
    "Spintronic Nano-Devices for Nonvolatile VLSIs",
    1st University of Chicago / AIMR Joint Research Center Workshop, Sendai, Japan, September, 2014.（invited）
  30. S. Fukami, H. Sato, S. DuttaGupta, C. Zhang, and H. Ohno,
    "Two and Three-Terminal Spintronics Devices for Nonvolatile Memory and Logic",
    Eleventh International Conference on Flow Dynamics (ICFD), Sendai International Center, JPN, October, 2014.（invited）
  31. H. Ohno,
    "Spintronics - recent advances",
    4th imec-Stanford International Workshop on Resistive Memories, Stanford, USA, October, 2014.（invited）
  32. S. Fukami, H. Sato, C. Zhang, and H. Ohno,
    "Three-terminal nonvolatile spintronics memory device using spin-transfer torque and spin-orbit torque",
    14th Non-Volatile Memory Technology Symposium (NVMTS 2014), Jeju Grand Hotel, Korea, October, 2014.（invited）
  33. M. Hayashi,
    "Spin orbit torques and chiral magnetism in ultrathin magnetic heterostructures",
    59th Annual Magnetism & Magnetic Materials Conference (MMM2014), Hawaii, USA, November, 2014.（invited）
  34. S. DuttaGupta, S. Fukami, M. Yamanouchi, C. Zhang, H. Sato, F. Matsukura, and H. Ohno,
    "Domain wall creep in Ta/CoFeB/MgO wire induced by current or field",
    59th Annual Magnetism & Magnetic Materials Conference (MMM2014), Hawaii, USA, November, 2014.
  35. C. Zhang, S. Fukami, H. Sato, M. Yamanouchi, F. Matsukura, and H. Ohno,
    "Device size dependence of magnetization reversal by spin-orbit torque in Ta/CoFeB/MgO structure down to sub 100 nm",
    59th Annual Magnetism & Magnetic Materials Conference (MMM2014), Hawaii, USA, November, 2014.
  36. T. Yu, H. Naganuma, M. Oogane and Y. Ando,
    "Modulation of magnetoresistance in magnetic tunneling junction by microwave",
    59th Annual Magnetism & Magnetic Materials Conference (MMM2014), Hawaii, USA, November, 2014.
  37. H. Sato, E.C.I. Enobio, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, and H. Ohno,
    "Intrinsic critical current and thermal stability factor of MgO/CoFeB/Ta/CoFeB/MgO recording structure scaling down to 11 nm",
    59th Annual Magnetism & Magnetic Materials Conference (MMM2014), Hawaii, USA, November, 2014.
  38. Kab-Jin Kim, T. Moriyam, H. Tanigawa, E. Kariyada, T. Ono,
    "Negligible transient effect for current-induced domain-wall motion in ferromagnetic Co/Ni nanowires",
    59th Annual Magnetism & Magnetic Materials Conference (MMM2014), Hawaii, USA, November, 2014.
  39. H. Ohno,
    "Spintronics Materials and Devices for Nonvolatile VLSIs",
    1st International Symposium on Interactive Materials Science Cadet Program (iSIMSC), Osaka, Japan, November, 2014.（invited）
  40. H. Ohno,
    "Nano-Scale Magnetic Tunnel Junction for Nonvolatile VLSIs",
    2nd International Symposium on the Functionality of Organized Nanostructures (FON), Tokyo, Japan, November, 2014.（invited）
  41. T. Ono,
    "Current-induced magnetic domain wall motion",
    Yukawa International Seminar (YKIS) 2014, Kyoto, Japan, December, 2014.（invited）
  42. H. Ohno,
    "Korea University Special Seminar",
    Korea University, Seoul, Korea, December, 2014.（invited）
  43. T. Hanyu, D. Suzuki, A. Mochizuki, M. Natsui, N. Onizawa, T. Sugibayashi,S. Ikeda, T. Endoh, and H. Ohno,
    "Challenge of MOS/MTJ-Hybrid Nonvolatile Logic-in-Memory Architecture in Dark-Silicon Era",
    2014 International Electron Devices Meeting (IEDM), San Francisco, CA, USA, December, 2014.（invited）
  44. S. Ikeda, H. Sato, H. Honjo, E. C. I. Enobio, S. Ishikawa, M. Yamanouchi, S. Fukami, S. Kanai, F. Matsukura, T. Endoh and H. Ohno,
    "Perpendicular-anisotropy CoFeB-MgO based magnetic tunnel junctions scaling down to 1X nm",
    2014 International Electron Devices Meeting (IEDM), San Francisco, CA, USA, December, 2014.（invited）
  45. H. Ohno,
    "Nanoscale Magnetic Tunnel Junction",
    Nanyang Technological University Seminar, Singapore, December, 2014.（invited）
  46. T. Ono,
    "Domain wall dynamics under Dzyaloshinskii-Moriya interaction",
    1st International Workshop on Spinorbitronics, Seoul, Korea, February, 2015.（invited）
  47. T. Hanyu,
    "Nonvolatile Logic-in-Memory Architecture for Ultra-Low Power VLSI Systems",
    2015 International Solid-State Circuits Conference (ISSCC), San Francisco, CA,, February, 2015.（invited）
  48. T. Ono,
    "Dzyaloshinskii-Moriya interaction, spin orbit torque, and domain wall dynamics",
    International Workshop on Spin-Orbit Torque 2015, KAUST, Jeddah, Saudi Arabia, February, 2015.（invited）
  49. T. Hanyu, D. Suzuki, N. Onizawa, S. Matsunaga, M. Natsui and A. Mochizuki,
    "Spintronics-Based Nonvolatile Logic-in-Memory Architecture Towards an Ultra-Low-Power and Highly Reliable VLSI Computing Paradigm",
    Design, Automation, and Test in Europe (DATE 2015), Grenoble France, March, 2015.（invited）
  50. O. Stejskal, A. Thiaville, S. Fukami, H. Ohno, J. Hamrle,
    "Description of electron transport in multilayer systems using Boltzmann approach",
    Deutsche Physikalische Gesellschaft, Spring meeting, Berlin, Germany, March, 2015.
  51. H. Ohno,
    "Spintronics Devices for Integrated Circuits - an Overview",
    1st CIES Technology Forum, Tokyo, Japan, March, 2015.（invited）